Department of Materials Science and Engineering
Faculty
Professors: Yves J. Chabal (Head), Massimo
V. Fischetti, Bruce E. Gnade, Julia W. Hsu, Moon
J. Kim, Robert M. Wallace
Associate Professors:
Kyeongjae (KJ) Cho, Lev D. Gelb, Jiyoung Kim, Manuel Quevedo, Eric M. Vogel, Amy V. Walker
Assistant Professors: Christopher L. Hinkle,
Walter E. Voit
Research Professors:
Wiley P. Kirk (Associate Head), Padmakumar Nair
Professor Emeritus: Don W. Shaw
UTD Affiliated Faculty:
Mark Lee
(Physics), Anvar Zakhidov
(Physics), Anton Malko (Physics), Ray
H. Baughman (Chemistry), Mihaela Stefan (Iovu)
(Chemistry), Walter Hu (Electrical Engineering), Gil S.
Lee (Electrical Engineering), Matthew J. Goeckner
(Electrical Engineering), Larry J. Overzet (Electrical Engineering), JB Lee
(Electrical
Engineering), Hongbing Lu (Mechanical
Engineering), Fatemeh Hassinopour
(Mechanical Engineering)
Adjunct
Faculty: Luigi Colombo (Texas
Instruments), Husam Alshareef (KAUST,
Saudia Arabia), Richard Irwin
(Texas Instruments), Prashant Majhi (SEMATECH,
Austin, Texas), Bin Shan (Huazhong University of
Science and Technology), Glen Birdwell (Army Research Laboratories), Mathew
David Halls (Materials Design), Oleg Lourie (Nanofactory Instruments Inc.)
Objectives
The objective of the
Master
of Science (M.S.)
degree in materials science and engineering is to provide
intensive preparation for the professional practice in modern
materials science by those engineers and scientists who
wish to continue their education. Courses are offered at times
and locations
convenient for the student who is employed on a full-time basis.
The
objective of the Doctor
of Philosophy (Ph.D.) program in materials science and
engineering is to prepare individuals to perform original, cutting-edge
research in materials science, particularly in the areas of
nano-structured materials, electronics,
optical and magnetic materials, bio-mimetic materials, polymeric materials,
MEMS materials and systems, organic electronics, and advanced processing of modern materials.
Scholarship Opportunities
The Erik Jonsson School of Engineering and Computer Science offers
competitive scholarship awards for very well qualified students. Interested
students should request application materials by contacting the Department of
Materials Science and Engineering.
Master
of Science in Materials Science and Engineering
Admission
Requirements
The
University’s general admission requirements are discussed here.
A student lacking undergraduate prerequisites
for graduate courses in Materials Science and Engineering must complete these prerequisites or receive approval from the
graduate adviser and the course instructor. A diagnostic exam may be required. Specific admission
requirements are
as follows:
•
Student
has met standards equivalent to those currently required for admission to the
Ph.D. or Master’s degree programs in Materials Science, Electrical Engineering,
Chemistry, Physics, or Biology.
•
A
grade-point average in undergraduate-level course work of 3.5 or better on a
4-point scale.
•
GRE
scores of 500, 700 and 4 for the verbal, quantitative and analytical writing
components, respectively, are advisable based on our experience with student
success in the program.
Students,
who fulfill only some of the above requirements, if admitted conditionally,
will be required to take graduate level courses as needed to make up any
deficiencies.
Degree Requirements
The
University’s general degree requirements are discussed here.
The
MSEN M.S. degree requires a minimum of 33 semester credit hours.
All students must have an academic advisor
and an approved degree plan. These are based upon the student’s choice of
concentration. Courses taken without advisor approval will not count toward the
33 semester-hour requirement. Successful completion of the approved course of
studies leads to the M.S. degree.
M.S.
students undertaking the non-thesis option must complete at least 33 semester credit
hours of coursework with a grade of B or better.
M.S.
students undertaking the thesis option must carry out a research project under
the direction of a faculty
or affiliated faculty
in Materials Science and
Engineering, and complete and
defend a thesis on the research project, but they need only complete the four
core courses and 9 semester credit hours of advanced course work. A Supervisory
Committee will be appointed once the faculty member accepts the student for a
research project. The rules for the thesis defense are specified by the Office
of the Dean of Graduate Studies.
For each of the proposed degree programs, students
must obtain a grade of B¯ or better in each class and maintain an average core
class GPA of at least 3.0 to remain in good standing and satisfy their degree
requirements:
•
MSEN
5310 Thermodynamics of Materials
•
MSEN
5360 Materials Characterization
•
MSEN 6324 (EEMF 6324)
Electronic, Optical and Magnetic Materials
•
MSEN
6319 Quantum Mechanics for Materials Scientists
Note: the
presence of a course number in parentheses indicates that this course is
cross-listed in another department.
A
student may petition for waiver of core courses, and if the Materials Science
and Engineering Faculty, or a designated committee, finds that the student has
mastered the course material, the student may replace that core course with
elective courses for a total of twelve semester credit hours.
A
minimum of 9 semester credit hours of advanced coursework is required, from the
following list:
•
MSEN
5340 (CHEM 5340) Advanced Polymer Science and Engineering
•
MSEN
5361 Fundamentals of Surface and Thin Film Analysis
•
MSEN
5370 Ceramics and Metals
•
MSEN
5377 (PHYS 5377) Computational Physics of Nanomaterials
•
MSEN
6310 (MECH 6301) Mechanical Properties of Materials
•
MSEN
6320 (EEMF 6320) Fundamentals of Semiconductor Devices
•
MSEN
6330 Phase Transformations
•
MSEN
6340 Advanced Electron Microscopy
•
MSEN 6341 Advanced Electron
Microscopy Laboratory
•
MSEN
6350 Imperfections in Solids
•
MSEN
6377 (PHYS 6377) Physics of Nanostructures: Carbon Nanotubes, Fullerenes,
Quantum Wells, Dots and Wires
The
remaining credit hours are to be taken from the following list of Specialized
Courses (or approved electives from Physics, Chemistry, Biology, or Electrical
and Mechanical Engineering):
•
MSEN
5300 (PHYS 5376) Introduction to Materials Science
•
MSEN
5320 Materials Science for Sustainable Energy
•
MSEN
5331 (CHEM 5331) Advanced Organic Chemistry I
•
MSEN
5333 (CHEM 5333) Advanced Organic Chemistry II
•
MSEN
5341 (CHEM 5341) Advanced Inorganic Chemistry
•
MSEN
5344 Thermal Analysis
•
MSEN
5353 Integrated Circuit Packaging
•
MSEN
5355 (CHEM 5355) Analytical Techniques I
•
MSEN
5356 (CHEM 5356) Analytical Techniques II
•
MSEN
5371 (PHYS 5371) Solid State Physics
•
MSEN
5375 (PHYS 5375) Electronic Devices Based On Organic Solids
•
MSEN
5383 (PHYS 5383 and EEMF 5383) Plasma Technology
•
MSEN
5410 (BIOL 5410) Biochemistry of Proteins and Nucleic Acids
•
MSEN
5440 (BIOL 5440) Cell Biology
•
MSEN
6313 (EEOP 6313) Semiconductor Opto-Electronic
Devices
•
MSEN
6321 (EEMF 6321) Active Semiconductor Devices
•
MSEN
6322 (EEMF 6322, MECH 6322) Semiconductor Processing Technology
•
MSEN
6348 (EEMF 6348) Lithography and Nanofabrication
•
MSEN
6358 (BIOL 6358) Bionanotechnology
•
MSEN
6361 (MECH 6361) Deformation Mechanisms in Solid Materials
•
MSEN
6362 Diffraction Science
•
MSEN
6371 (PHYS 6371) Advanced Solid State Physics
•
MSEN
6374 (PHYS 6374) Optical Properties Of Solids
•
MSEN
6382 (EEMF 6382) Introduction to MEMS
•
MSEN
7320 (EEMF 7320) Advanced Semiconductor Device Theory
•
MSEN
7V80 Special Topics in Materials Science and Engineering
•
MSEN
8V40 Individual Instruction in Materials Science and Engineering
•
MSEN
8V70 Research In Materials Science and Engineering
•
MSEN
8V98 Thesis
Doctor of Philosophy in
Materials Science and Engineering
Admission
Requirements
The
University’s general admission requirements are discussed here.
A student lacking undergraduate prerequisites
for graduate courses in Materials Science and Engineering must complete these prerequisites or receive approval from the
graduate adviser and the course instructor.
A diagnostic exam may be required. Specific
admission requirements follow.
The student entering the MSEN program should
meet the following guidelines:
•
Student
has met standards equivalent to those currently required for admission to the
Ph.D. or Master’s degree programs in Materials Science, Electrical Engineering,
Chemistry, Physics, or Biology.
•
a
grade-point average in undergraduate-level course work of 3.5 or better on a
4-point scale
•
GRE
scores of 500, 700 and 4 for the verbal, quantitative and analytical writing
components, respectively, are advisable based on our experience with student
success in the program.
Students
who fulfill some of the above requirements, if admitted conditionally, will be
required to take graduate level courses as needed to make up any deficiencies.
Degree Requirements
The
University’s general degree requirements are discussed here.
The MSEN
Ph.D. requires a minimum of 75 semester hours beyond the baccalaureate degree.
These credits must include at least 30 semester hours of graduate-level courses
in MSEN.
All students
must have an academic advisor and an approved degree plan. Courses taken
without advisor approval will not count toward the 75 semester-hour
requirement.
Each doctoral student must carry out original
research in the area of Materials Science and Engineering, under the direction
of a faculty or affiliated faculty of Materials Science and Engineering, and
complete and defend a dissertation on the research project. A Supervisory
Committee will be appointed once the faculty member accepts the student for a
research project. Students must be admitted to doctoral
candidacy by passing a Qualifying Exam, which will be administered near the
time that the students have completed their course work. Upon passing the Qualifying Exam, students
must present and defend a Research Proposal with their Supervisory Committee within
approximately nine months or sooner after passing the Qualifying Exam. The rules for the dissertation research and defense are
specified by the Office of the Dean of Graduate Studies.
For the proposed degree program, students
must obtain a grade of B¯ or better in each class and maintain an average core
class GPA of at least 3.0 to remain in good standing and satisfy their degree
requirements:
•
MSEN
5310 Thermodynamics of Materials
•
MSEN
5360 Materials Characterization
•
MSEN
6319 Quantum Mechanics for Materials Scientists
•
MSEN 6324 (EEMF 6324)
Electronic, Optical and Magnetic Materials
Note: the
presence of a course number in parentheses indicates that this course is
cross-listed in another department.
A
student may petition for waiver of core courses, and if the MSEN faculty, or a
designated committee, finds that the student has mastered the course material,
the student may replace that core course with elective courses for up to a
total of twelve semester credit hours.
A
minimum of 9 semester credit hours of advanced coursework is required, from the
following list:
•
MSEN
5340 (CHEM 5340) Advanced Polymer Science and Engineering
•
MSEN
5361 Fundamentals of Surface and Thin Film Analysis
•
MSEN
5370 Ceramics and Metals
•
MSEN
5377 (PHYS 5377) Computational Physics of Nanomaterials
•
MSEN
6310 (MECH 6301) Mechanical Properties of Materials
•
MSEN
6320 (EEMF 6320) Fundamentals of Semiconductor Devices
•
MSEN
6330 Phase Transformations
•
MSEN 6340 Advanced Electron
Microscopy
•
MSEN
6341 Advanced Electron Microscopy Laboratory
•
MSEN
6350 Imperfections in Solids
•
MSEN
6377 (PHYS 6377) Physics of Nanostructures: Carbon Nanotubes, Fullerenes,
Quantum Wells, Dots and Wires
The
remaining credit hours are to be taken from the following list of Specialized
Courses (or approved electives from Physics, Chemistry, Biology, or Electrical
and Mechanical Engineering):
•
MSEN
5300 (PHYS 5376) Introduction to Materials Science
•
MSEN
5320 Materials Science for Sustainable Energy
•
MSEN
5331 (CHEM 5331) Advanced Organic Chemistry I
•
MSEN
5333 (CHEM 5333) Advanced Organic Chemistry II
•
MSEN
5341 (CHEM 5341) Advanced Inorganic Chemistry
•
MSEN
5344 Thermal Analysis
•
MSEN
5353 Integrated Circuit Packaging
•
MSEN
5355 (CHEM 5355) Analytical Techniques I
•
MSEN
5356 (CHEM 5356) Analytical Techniques II
•
MSEN
5371 (PHYS 5371) Solid State Physics
•
MSEN
5375 (PHYS 5375) Electronic Devices Based On Organic Solids
•
MSEN
5383 (PHYS 5383 and EEMF 5383) Plasma Technology
•
MSEN
5410 (BIOL 5410) Biochemistry of Proteins and Nucleic Acids
•
MSEN
5440 (BIOL 5440) Cell Biology
•
MSEN
6313 (EEOP 6313) Semiconductor Opto-Electronic
Devices
•
MSEN
6321 (EEMF 6321) Active Semiconductor Devices
•
MSEN
6322 (EEMF 6322) Semiconductor Processing Technology
•
MSEN
6348 (EEMF 6348) Lithography and Nanofabrication
•
MSEN
6358 (BIOL 6358) Bionanotechnology
•
MSEN
6361 (MECH 6361) Deformation Mechanisms in Solid Materials
•
MSEN
6362 Diffraction Science
•
MSEN
6371 (PHYS 6371) Advanced Solid State Physics
•
MSEN
6374 (PHYS 6374) Optical Properties Of Solids
•
MSEN
6382 (EEMF 6382) Introduction to MEMS
•
MSEN
7320 (EEMF 7320) Advanced Semiconductor Device Theory
•
MSEN
7V80 Special Topics in Materials Science and Engineering
•
MSEN
8V40 Individual Instruction in Materials Science and Engineering
•
MSEN
8V70 Research in Materials Science and Engineering
•
MSEN
8V98 Thesis
•
MSEN
8V99 Dissertation
Description of
Facilities Available for Conducting Research
A limited list of the
extensive array of the materials characterization, synthesis, and processing
tools that exist in the Department for student use in research are described
below.
Advanced Electron Microscopy
Laboratory
Focused Ion Beam/Scanning Electron Microscopy
The focused ion
beam system is a FEI Nova 200 NanoLab which is a dual
column SEM/FIB. It combines
ultra-high resolution field emission scanning electron microscopy (SEM) and
focused ion beam (FIB) etch and deposition for nanoscale
prototyping, machining, 2-D and 3-D characterization, and analysis. Five gas injection
systems are available for deposition (e.g. Pt, C, SiO2) and etching (e.g. Iodine for metals, and a dielectric
etch). Nanoscale
chemical analysis is done with energy dispersive X-ray spectroscopy (EDS). A high resolution
digital patterning system controlled from the User Interface is also available. Predefined device structures in Bitmap format
can be directly imported to the patterning system for nanoscale
fabrication. The FEI Nova 200 is
also equipped with a Zyvex F100 nano-manipulation
stage, which includes four manipulators with 10 nm positioning resolution. The four
manipulators can be fitted with either sharp whisker probes for electrically
probing samples or microgrippers for manipulating
nanostructures as small as 10 nanometers. This
is the first instrument of its kind in the world that combines a dual beam FIB
with the F100 nanomanipulator, providing unparalleled
nanofabrication and nanomanipulation.
High-Resolution Transmission Electron Microcopy
The facility
operates and maintains two state-of-the-art transmission electron microscopes
(TEM), and a host of sample preparation equipments. It also provides
microscopy computing and visualization capabilities. Techniques and equipment available includes
the following:
(i) High Resolution Structural Analysis -
The high-resolution imaging TEM is a JEOL 2100 F which is a 200kV field
emission TEM.
Its capability
includes atomic scale structural imaging with a resolution of better than 0.19
nm, and in-situ STM/TEM. (ii) High Resolution Chemical and Electronic
Structure Analysis - High
resolution analytical TEM is a second JEOL 2100F field emission TEM/STEM
equipped with an energy dispersive x-ray spectrometer (EDS), an electron energy
loss spectrometer (EELS), and a high angle Z-contrast imaging detector. This instrument performs
chemical and electronic structure analysis with a spatial resolution of better
than 0.5 nm in EELS mode and is also capable of spectrum imaging and mapping. The image
resolution in the chemically sensitive Z-contrast scanning TEM (STEM) mode will
be about 0.14 nm. Its capability also
includes in-situ cryogenic cooling and heating, and a computer control system
for remote microscopy operation.
X-ray Diffraction Suite
A Rigaku Ultima III X-ray Diffractometer system is available for thin film diffraction
characterization. The system is equipped with a cross beam optics system to
permit either High-resolution parallel beam with a motor controlled multilayer
mirror, or a Bragg-Brentano Para-Focusing beam (without the multilayer mirror)
which are permanently mounted, pre-aligned and user selectable with no need for
any interchange between components. Curved graphite crystal or Ge monochrometers are also
available. An integrated annealing attachment permits the in-situ examination of film structure up to 1500°C. The instrument
enables a variety of applications including in-plane and normal geometry phase
identification, quantitative analysis, lattice parameter refinement,
crystallite size, structure refinement, residual stress, density, roughness
(from reflectivity geometries), and depth-controlled phase identification. Detection
consists of a computer controlled scintillation counter. Sample sizes up to 100
mm in diameter can be accommodated on this system. A new Rigaku Rapid Image Plate Diffractometer
system is also available for small spot (30mm - 300mm) XRD work. The digital
image plate system enables the acquisition of diffraction data over a 204°
angle with a rapid laser scanning readout system. An integrated annealing attachment permits the in-situ examination of film structure up
to 900C on this system. A complete set of new control, database and analysis
workstations and software is associated with these new systems.
Wafer Bonding Laboratory
An UHV wafer
bonding unit, especially designed to use surface characterization and thin-film
deposition techniques to measure and control substrate and interface chemistry
within limits necessary to make heterojunction
devices, is available to produce integrated heterostructures
with well controlled chemistry that are tractable for quantitative nanostructural and properties measurements. This unit is
capable of synthesizing interfaces by direct wafer bonding and/or in-situ thin
film deposition method, and offers greater flexibility for producing advanced
integrated artificial structures. It
consists of five interconnected ultra high vacuum
(UHV) chambers for in-situ surface preparation and analysis, addition of
interface interlayers by e-beam or UHV sputter deposition, a bonding chamber,
and a sample entry and preparation chamber. The base pressure
is 2x10-10 Torr. Orientation of the
bonded pairs can be controlled to ~ 0.1 degree prior to bonding. Ex-situ surface preparations using etching and
low energy reactive plasma cleaning is done in a cleanroom to protect
substrates prior to insertion in the bonding instrument. An atomic force
microscopy (AFM) is also available to provide direct measurements of these
effects, to supplement the indirect information of RHEED.
Molecular Beam Epitaxy
The ability to grow materials an atomic
layer at a time is provided by molecular beam epitaxy
(MBE). In particular three MBE
deposition systems are linked together with a UHV transfer module. The first system, V80S, is designed to grow undoped and doped group-IV compounds such as Si, Ge, and strained Si/Ge superlattices structures. Doping n and p-type is done with Sb
and B respectively. The vertical growth
chamber in this system incorporates two electron-beam evaporators for Si and Ge and two effusion cells for doping. In addition it has a preparation chamber with
a high temperature heating stage. The
second chamber, V80H, features a horizontal growth chamber, eight effusion
cells, and a preparation chamber. It is
designed to grow II-VI materials such as BeTe, BeSe, ZnSe, ZnS,
BeTeSe, and CdSeTe, epilayers as well as quantum well and superlattice
structures. It also has an atomic N
plasma source for p-doping and ZnCl2
for n-doping. The third system is identical to the second
one; however, this system is used to grow III-V materials such as GaAs, InGaAs, and AlGaAs and to dope with Be and
Si. VG Instruments built all three
systems. They are fully controlled by
computers and equipped with high-capacity, vacuum-pumping units that operate at
a base pressure in the low 10-10 mbar range without liquid nitrogen
cooling. Each growth chamber is equipped
with various types of analytical tools such as RHEED and QMS.
Computational Materials Science
Laboratory
Materials modeling
software tools and hardware facilities are available for nanoscale
materials research. Atomistic modeling software tools are used for structure
and dynamic analysis of diverse material systems at nanoscales,
and the examples include nanoelectronic materials and
nanomaterials for renewable energy applications. For
quantum mechanical analysis of materials, density functional theory (DFT)
software tools (VASP, ABINIT, PWSCF, and SIESTA) are used on local parallel
computing cluster. In-house quantum transport modeling software tool is used
for I-V calculation of nanoelectronic devices using
the non-equilibrium Green’s function (NEGF) method. These software and hardware
tools are also used for class projects in MSEN 5377.
Cleanroom Research Laboratory
The cleanroom
facility located in the Natural Science and Engineering Research Laboratory is
utilized for materials and device research. The
facility has 5,000 sq. ft. of class 10,000 space. This facility contains semiconductor
processing equipment including optical and e-beam lithography, chemical
processing hoods, evaporation and sputter deposition systems, as well as a wide
variety of material and processing diagnostics. More details about this facility can be
found at this location.
In addition to the
facilities on campus, cooperative arrangements have been established with many
local industries to make their facilities available to U.T.
Dallas graduate engineering students.
